High-performance InP/InGaAs co-integrated metamorphic heterostructure bipolar and field-effect transistors with pseudomorphic base-emitter spacer and channel layers-Reference-Cited by-同舟云学术

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High-performance InP/InGaAs co-integrated metamorphic heterostructure bipolar and field-effect transistors with pseudomorphic base-emitter spacer and channel layers

Published:2014-02 Issue: Volume:92 Page:52-56
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Wu Yi-Chen,Tsai Jung-Hui,Chiang Te-Kuang,Chiang Chung-Cheng,Wang Fu-Min

Funder

National Science Council of the Republic of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Embedded-Ge source and drain in InGaAs/GaAs dual channel MESFET

2. GaAs P-HEMT MMIC processes behavior under multiple heavy ion radiation stress conditions combined with DC and RF biasing

3. Investigation of temperature-dependent characteristics of an n/sup +/-InGaAs/n-GaAs composite doped channel HFET

4. High power and high breakdown δ-doped In0.35Al0.65As/In0.35Ga0.65As metamorphic HEMT

5. Integration of enhancement/depletion- mode InGaP/InGaAs doped-channel pseudomorphic HFETs for direct-coupled FET logic application

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1. Semiconductor Heterojunctions ☆;Reference Module in Materials Science and Materials Engineering;2018

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