GaAs P-HEMT MMIC processes behavior under multiple heavy ion radiation stress conditions combined with DC and RF biasing-Reference-Cited by-同舟云学术

GaAs P-HEMT MMIC processes behavior under multiple heavy ion radiation stress conditions combined with DC and RF biasing

Published:2013-09 Issue:9-11 Volume:53 Page:1466-1470
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Bensoussan A.,Marec R.,Muraro J.L.,Portal L.,Calvel P.,Barillot C.,Perichaud M.G.,Marchand L.,Vignon G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

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4. Effects of radiation on millimeter-wave monolithic integrated circuits;Meulenberg;Proc SPIE,1991

5. Total dose and transient radiation effects on GaAs;Meulenberg;IEEE Trans Electron Dev,1988

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