Performance and direct-coupled FET logic applications of InAlAs/InGaAs co-integrated field-effect transistors by 2-D simulation-Reference-Cited by-同舟云学术

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Performance and direct-coupled FET logic applications of InAlAs/InGaAs co-integrated field-effect transistors by 2-D simulation

Published:2013-11 Issue: Volume:547 Page:267-271
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Tsai Jung-Hui,Huang Chia-Hong,Ou-Yang Jhih-Jhong,Chao Yi-Ting,Jhou Jia-Cing,Wu You-Ren

Funder

National Science Council of the Republic of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Extremely low-noise amplification with cryogenic FETs and HFETs: 1970-2004

2. Comprehensive Characterization of AlGaAs∕InGaAs∕GaAs Composite-Channel High-Electron Mobility Transistor

3. Linearity enhanced 2.4 GHz WLAN HBT power amplifier using digitally-controlled tunable output matching network with pHEMT switch in GaAs BiFET technology

4. Characteristics of In0.52Al0.48As/InxGa1−xAs HEMT’s with various InxGa1−xAs channels

5. Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Integrated Logic Circuits Based on Wafer-Scale 2D-MoS2 FETs Using Buried-Gate Structures;Nanomaterials;2023-10-30

2. Investigation of InP/In0.65Ga0.35As metamorphic p-channel doped-channel field-effect transistor;Superlattices and Microstructures;2016-07

3. Comparative investigation of GaAsSb/InGaAs type-II and InP/InGaAs type-I doped-channel field-effect transistors;Semiconductors;2015-02

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