MBE growth of ultra small coherent Ge quantum dots in silicon for applications in nanoelectronics
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference19 articles.
1. Type II broken band heterostructure quantum dot to obtain a material for the intermediate band solar cell
2. Improving solar cell efficiencies by up-conversion of sub-band-gap light
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5. Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications
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