Transient photoresponse and incident power dependence of high-efficiency germanium quantum dot photodetectors-Reference-Cited by-同舟云学术

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Transient photoresponse and incident power dependence of high-efficiency germanium quantum dot photodetectors

Published:2012-10-15 Issue:8 Volume:112 Page:083103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Liu Pei,Cosentino S.,Le Son T.,Lee S.,Paine D.,Zaslavsky A.,Pacifici D.,Mirabella S.,Miritello M.,Crupi I.,Terrasi A.

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4759252

Reference16 articles.

1. Si/Ge nanostructures

2. Plasma synthesis of group IV quantum dots for luminescence and photovoltaic applications

3. MBE growth of ultra small coherent Ge quantum dots in silicon for applications in nanoelectronics

4. Ge/Si Self-Assembled Quantum Dots and Their Optoelectronic Device Applications

5. Optical gain in silicon nanocrystals

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