Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications-Reference-Cited by-同舟云学术

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Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications

Published:2002-04 Issue:1-4 Volume:72 Page:93-100
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Nakajima K.,Usami N.,Fujiwara K.,Murakami Y.,Ujihara T.,Sazaki G.,Shishido T.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. GaAs/Ge tandem-cell space concentrator development

2. Czochralski growth of Ge1 − xSix alloy crystals

3. A boundary layer model for macrosegregation of Bridgman grown Ge1−xSix mixed crystals

4. Si-Ge solid solution single crystal growth by electron beam floating zone technique

5. Growth of ternary InxGa1−xAs bulk crystals with a uniform composition through supply of GaAs

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1. Future technologies of Si ingots for solar cells;Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces;2020

2. Crystallization and re-melting of Si1-xGex alloy semiconductor during rapid cooling;Journal of Alloys and Compounds;2019-08

3. Influence of germanium doping on the performance of high-performance multi-crystalline silicon;Journal of Crystal Growth;2015-04

4. MBE growth of ultra small coherent Ge quantum dots in silicon for applications in nanoelectronics;Journal of Physics and Chemistry of Solids;2008-02

5. Investigation of strain relaxation mechanism in small SiGe clusters;physica status solidi (b);2007-10

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