A boundary layer model for macrosegregation of Bridgman grown Ge1−xSix mixed crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Electronic-band parameters in strainedSi1−xGexalloys onSi1−yGeysubstrates
2. Band structures ofSixGe1−xalloys
3. Can a gradient crystal compete with a mosaic crystal as a monochromator in neutron- or X-ray diffraction?
4. Quantum efficiencies exceeding unity due to impact ionization in silicon solar cells
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Macrosegregation in vertical Bridgman grown Ge1−xSix alloy with large melt volume: Limit of complete mixing;Journal of Crystal Growth;2011-07
2. Distribution of aluminum and indium impurities in crystals of Ge-Si solid solutions grown from the melt;Crystallography Reports;2006-12
3. Growth of homogeneous single crystals of GeSi solid solutions using a Ge seed by the modified Bridgman method;Crystallography Reports;2005-12
4. A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystallization of SiGe bulk crystal;Journal of Crystal Growth;2005-04
5. Experimental study of the solid–liquid interface dynamics and chemical segregation in concentrated semiconductor alloy Bridgman growth;Journal of Crystal Growth;2005-03
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