Crystallization and re-melting of Si1-xGex alloy semiconductor during rapid cooling
Author:
Funder
ICC-IMR and GIMR collaborative projects
DST-SERB
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference27 articles.
1. Lateral photovoltage scanning (LPS) method for the visualization of the solid–liquid interface of Si1−xGex single crystals;Abrosimov;J. Cryst. Growth,2002
2. Growth of Si1−xGex bulk crystals with highly homogeneous composition for thermoelectric applications;Arivanandhan;J. Cryst. Growth,2010
3. Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications;Nakajima;Sol. Energy Mater. Sol. Cells,2002
4. High minority carrier lifetime in Ga and Ge codoped Czochralski-Silicon;Arivanandhan;Appl. Phys. Lett.,2009
5. Thermal and electrical properties of Czochralski grown GeSi single crystals;Yonenaga;J. Phys. Chem. Solids,2001
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