Lateral photovoltage scanning (LPS) method for the visualization of the solid–liquid interface of Si1−xGex single crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Electrical properties of lightly doped p-type silicon–germanium single crystals
2. Deep-level transient spectroscopy of the Ge-vacancy pair in Ge-dopedn-type silicon
3. Oxygen and peculiarities of its precipitation in Si1−xGex
4. Single crystal growth of Si1 − Ge by the Czochralski technique
5. Czochralski growth of Si- and Ge-rich SiGe single crystals
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