Oxygen and peculiarities of its precipitation in Si1−xGex-Reference-Cited by-同舟云学术

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Oxygen and peculiarities of its precipitation in Si1−xGex

Published:1999-12 Issue: Volume:273-274 Page:305-307
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Khirunenko L.I.,Sosnin M.G.,Abrosimov N.V.,Höhne M.,Shröder W.,Pomozov Yu.V.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Thermal donors in silicon-rich SiGe

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical properties of silicon with a high content of boron;Semiconductors;2013-02

2. Impurity engineering of Czochralski silicon;Materials Science and Engineering: R: Reports;2013-01

3. Oxygen diffusion in Si1−xGex alloys;Physica B: Condensed Matter;2009-12

4. Oxygen Diffusion in Si_1-xGe_x Alloys;Solid State Phenomena;2009-10

5. Ab initio modeling of interstitial oxygen in crystalline SiGe alloys;Journal of Non-Crystalline Solids;2006-06

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