Ab initio modeling of interstitial oxygen in crystalline SiGe alloys-Reference-Cited by-同舟云学术

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Ab initio modeling of interstitial oxygen in crystalline SiGe alloys

Published:2006-06 Issue:9-20 Volume:352 Page:1279-1281
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Torres V.J.B.,Coutinho J.,Briddon P.R.,Barroso M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Oxygen in Silicon,1994

2. Absorption of oxygen in silicon in the near and the far infrared

3. Computational study of interstitial oxygen and vacancy-oxygen complexes in silicon

4. Oxygen and dioxygen centers in Si and Ge: Density-functional calculations

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Infrared properties of interstitial oxygen in homogeneous bulk Si1−XGeX crystals;Journal of Crystal Growth;2021-07

2. Electrical and structural properties of In-implanted Si1−xGex alloys;Journal of Applied Physics;2016-01-14

3. Phase diagrams of Si1-xGex solid solution: a theoretical approach;Semiconductor Physics Quantum Electronics and Optoelectronics;2012-03-29

4. Quantumchemical simulation of diffusion in alloys: diffusion of interstitial oxygen atoms in Si1-xGex;physica status solidi (c);2010-12-17

5. Oxygen diffusion in Si1−xGex alloys;Physica B: Condensed Matter;2009-12

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