Oxygen diffusion in Si1−xGex alloys-Reference-Cited by-同舟云学术

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Oxygen diffusion in Si1−xGex alloys

Published:2009-12 Issue:23-24 Volume:404 Page:4698-4700
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Khirunenko L.I.,Pomozov Yu.V.,Sosnin M.G.,Duvanskii A.V.,Sobolev N.A.,Abrosimov N.V.,Riemann H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Oxygen-Related Defects in Silicon

2. Chapter 6 Some Atomic Configurations of Oxygen

3. Oxygen diffusion and precipitation in Czochralski silicon

4. Ab initio modeling of interstitial oxygen in crystalline SiGe alloys

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxygen in silicon: Switch in the diffusion-mediated mechanism;Physical Review B;2017-11-21

2. Density functional theory study of the impact of tin doping on oxygen diffusion in Czochralski silicon;physica status solidi (a);2013-07-29

3. The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon;Journal of Applied Physics;2011-03-15

4. The spectral bandshape of the ν3(1136 cm− 1) vibration of oxygen in silicon and dilute silicon–germanium alloys;Journal of Physics: Condensed Matter;2010-11-26

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