Electrical properties of lightly doped p-type silicon–germanium single crystals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367348
Reference18 articles.
1. Hole transport theory in pseudomorphicSi1−xGexalloys grown on Si(001) substrates
2. Electrical Properties of Germanium-Silicon Alloys
3. Valence Band Structure of Germanium-Silicon Alloys
4. Base resistance and effective bandgap reduction in n-p-n Si/Si/sub 1-x/Ge/sub x//Si HBTs with heavy base doping
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