Liquid-phase epitaxy of In-doped PbTe for the application of mid-infrared semiconductor laser
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference8 articles.
1. Electroluminescence properties of PbTe pn junctions fabricated under controlled Te vapor pressures
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3. Properties of Bi-doped PbTe epitaxial layers and pn junction diodes grown by TDM-CVP
4. Y. Horikoshi, in: W.T. Tsang (Ed.), Semiconductors and Semimetals, vol. 22c, Academic Press, New York, 1985, p. 19.
5. Liquid phase epitaxial growth of laser heterostructures in Pb1−xSnxTe
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1. Properties of heavily impurity-doped PbSnTe liquid-phase epitaxial layers grown by the temperature difference method under controlled Te vapor pressure;Journal of Crystal Growth;2017-07
2. Properties of Lead Telluride Mid-Infrared Imaging Devices of Focal Plane Arrays;Journal of Nanoscience and Nanotechnology;2017-07-01
3. Metal-semiconductor-metal infrared photodetector based on PbTe nanowires with fast response and recovery time;Applied Surface Science;2017-05
4. Negative resistance of reverse-biased PbSnTe/PbTe double heterojunction diodes;Results in Physics;2016
5. Mid-infrared transmission imaging and spectroscopy with PbSnTe laser diodes grown with stoichiometry-controlled liquid-phase epitaxy;Infrared Physics & Technology;2015-09
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