Metal-semiconductor-metal infrared photodetector based on PbTe nanowires with fast response and recovery time-Reference-Cited by-同舟云学术

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Metal-semiconductor-metal infrared photodetector based on PbTe nanowires with fast response and recovery time

Published:2017-05 Issue: Volume:404 Page:7-11
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Gong Xin Xin,Fei Guang Tao,Fu Wen Biao,Zhong Bin Nian,Gao Xu Dong,Zhang Li De

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference34 articles.

1. Infrared Detectors;Rogalski,2011

2. Effects of CdZnTe buffer layer thickness on properties of HgCdTe thin film grown by pulsed laser deposition;Liu;Appl. Surf. Sci.,2013

3. The effect of substrate material on pulsed laser deposition of HgCdTe films;Liu;Appl. Surf. Sci.,2009

4. Influence of delta-doping on the performance of Ge/Si quantum-dot mid-infrared photodetectors;Yakimov;J. Appl. Phys.,2012

5. High-performance Ge-on-Si photodetectors;Michel;Nat. Photonics,2010

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