Properties of Bi-doped PbTe epitaxial layers and pn junction diodes grown by TDM-CVP

Author:

Yasuda Arata,Suto Ken,Nishizawa Jun-ichi

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference7 articles.

1. Liquid phase epitaxy of GaP by a temperature difference method under controlled vapor pressure;Nishizawa;IEEE Trans Electron Dev,1975

2. Liquid phase epitaxial grown of laser heterostructures in Pb1−xSnxTe;Tomasetta;Appl Phys Lett,1974

3. Horikoshi Y. In: Tsang WT, editor. Semiconductors and semimetals, vol. 22c. New York: Academic Press; 1985, p.19.

4. Growth and electrical properties of PbTe epitaxial layers grown by temperature difference method under controlled vapor pressure liquid phase epitaxy;Nugraha, Itoh O, Suto K, Nishizawa;Cryst Growth,1996

5. Te vapor pressure dependence of the pn junction properties of PbTe liquid phase epitaxial layers;Nugraha;J Electron Mater,1998

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