Effect of hydrostatic pressure on the hole effective mass in a strained InGaAs/GaAs quantum well
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference33 articles.
1. The light-hole mass in a strained InGaAs/GaAs single quantum well and its pressure dependence
2. Time-resolved photoluminescence of InAs quantum dots in a GaAs quantum well
3. Comparative optical studies of InGaAs/GaAs quantum wells grown by MBE on (100) and (311)A GaAs planes
4. Excitonic transitions in strained-layerInxGa1−xAs/GaAs quantum wells
5. Band structure and absorption properties ofGaAs1−xNx∕InAs1−yNyshort period superlattices strained toInP(001)
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