The light-hole mass in a strained InGaAs/GaAs single quantum well and its pressure dependence-Reference-Cited by-同舟云学术

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The light-hole mass in a strained InGaAs/GaAs single quantum well and its pressure dependence

Published:1995-03 Issue:3-4 Volume:56 Page:469-473
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Lancefield D.,Adams A.R.,Meney A.T.,Knap W.,Litwin-Staszewska E.,Skierbiszewski C.,Robert J.L.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference13 articles.

1. Valence band engineering in strained-layer structures

2. Pressure dependence of light-hole transport in strained InGaAs/GaAs

3. Light‐hole conduction in InGaAs/GaAs strained‐layer superlattices

4. In‐plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation‐doped heterostructures

5. Diagonal representation for the transfer-matrix method for obtaining electronic energy levels in layered semiconductor heterostructures

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal effect analysis of high-speed VCSELs with optimized quantum well gain-to-cavity etalon wavelength offset;2021 International Conference on Optical Instruments and Technology: Advanced Laser Technology and Applications;2022-07-08

2. Comparative study on stained InGaAs quantum wells for high-speed optical-interconnect VCSELs;Optics Communications;2018-05

3. Impact of the Quantum Well Gain-to-Cavity Etalon Wavelength Offset on the High Temperature Performance of High Bit Rate 980-nm VCSELs;IEEE Journal of Quantum Electronics;2014-08

4. Extreme g-factor anisotropy of low mobility 2D hole gas in GaAs/In0.2Ga0.8As/GaAs quantum well;Physica E: Low-dimensional Systems and Nanostructures;2014-03

5. Effect of hydrostatic pressure on the hole effective mass in a strained InGaAs/GaAs quantum well;Journal of Physics and Chemistry of Solids;2014-02

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