Pressure dependence of light-hole transport in strained InGaAs/GaAs-Reference-Cited by-同舟云学术

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Pressure dependence of light-hole transport in strained InGaAs/GaAs

Published:1990-04 Issue:1-3 Volume:229 Page:122-125
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Lancefield D.,Batty W.,Crookes C.G.,O'Reilly E.P.,Adams A.R.,Homewood K.P.,Sundaram G.,Nicholas R.J.,Emeny M.,Whitehouse C.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference6 articles.

1. Light‐hole conduction in InGaAs/GaAs strained‐layer superlattices

2. Reassessment of ionized impurity scattering and compensation in GaAs and InP including correlation scattering

3. Subbands and Landau levels in the two-dimensional hole gas at the GaAs-AlxGa1−xAs interface

4. Hole intersubband transitions in GaAs/AlGaAs multiple quantum wells… A new method for determining the Luttinger parameters

5. Valence-Band Parameters in Cubic Semiconductors

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Long spin relaxation time of holes in InGaAs/GaAs quantum wells probed by cyclotron resonance spectroscopy;Physical Review B;2013-02-15

2. The cyclotron resonance of holes in InGaAs/GaAs heterostructures with quantum wells in quantizing magnetic fields;Semiconductors;2010-11

3. p-type Channel Field-Effect Transistors;Fundamentals of III-V Semiconductor MOSFETs;2010

4. High-field splitting of the cyclotron resonance absorption in strainedp-InGaAs/GaAsquantum wells;Physical Review B;2009-02-10

5. Compound Heterostructure Semiconductor Lasers and Photodetectors;Low Temperature Electronics;2001

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