In‐plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation‐doped heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101121
Reference5 articles.
1. Large valence‐band nonparabolicity and tailorable hole masses in strained‐layer superlattices
2. Electronic properties of pseudomorphic (on GaAs) and (on InP) Modfet structures
3. GaAs/(In,Ga)As,p‐channel, multiple strained quantum well field‐effect transistors with high transconductance and high peak saturated drain current
4. Effective masses of holes at GaAs-AlGaAs heterojunctions
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