Excitonic transitions in strained-layerInxGa1−xAs/GaAs quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.10017/fulltext
Reference34 articles.
1. InxGa1−xAs−InyGa1−yAsstrained-layer superlattices: A proposal for useful, new electronic materials
2. Acoustic deformation potentials and heterostructure band offsets in semiconductors
3. Band lineups and deformation potentials in the model-solid theory
4. Structural and electronic properties of epitaxial thin-layerSinGensuperlattices
5. Physics and applications of GexSi1-x/Si strained-layer heterostructures
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