Nitridation of InP(100) substrates studied by XPS spectroscopy and electrical analysis-Reference-Cited by-同舟云学术

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Nitridation of InP(100) substrates studied by XPS spectroscopy and electrical analysis

Published:2006-11 Issue:2 Volume:437 Page:254-258
ISSN:0921-5093
Container-title:Materials Science and Engineering: A
language:en
Short-container-title:Materials Science and Engineering: A

Author:

Talbi A.,Benamara Z.,Akkal B.,Gruzza B.,Bideux L.,Robert C.,Varenne C.,Chami N.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Effect of the substrate pretreatment on the epitaxial growth of indium nitride

2. XPS studies on nitridation of InP(100) surface by ion beam bombardment

3. Hydride multibarrel reactors suitable for microwave and optoelectronic (Ga, In)(As, P) heterostructure growth

4. III–V surface plasma nitridation: A challenge for III–V nitride epigrowth

5. In situ characterization of the nitridation of AIII–BV semiconductor surfaces by means of X-ray photoelectron spectroscopy

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