Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe2-Reference-Cited by-同舟云学术

Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe2

Published:2018-02 Issue:2 Volume:6 Page:026603
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Khosravi Ava¹,Addou Rafik¹^ORCID,Smyth Christopher M.¹,Yue Ruoyu¹,Cormier Christopher R.¹,Kim Jiyoung¹^ORCID,Hinkle Christopher L.¹,Wallace Robert M.¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USA

Funder

Semiconductor Research Corporation

NSF | ENG | Division of Electrical, Communications and Cyber Systems

SRC | Microelectronics Advanced Research Corporation

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5002132

Reference30 articles.

1. Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors

2. High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

3. Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide

4. Solar-energy conversion and light emission in an atomic monolayer p–n diode

5. Optical band gap in tungsten diselenide single crystals intercalated by indium

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