Low-power phase-change memory cell based on a doped GeTe/InP heterostructure: a first-principles study-Reference-Cited by-同舟云学术

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Low-power phase-change memory cell based on a doped GeTe/InP heterostructure: a first-principles study

Published:2022-09-26 Issue:6 Volume:21 Page:1239-1249
ISSN:1569-8025
Container-title:Journal of Computational Electronics
language:en
Short-container-title:J Comput Electron

Author:

Yang Fei^ORCID,Liu Wenjin,Zhu Ziyue,Zhuo Zhenguo,Cao Xincheng,Tao Yue,He Zijian,Liu Bingkun

Funder

National Natural Science Foundation of China

University Natural Science Research Project of Anhui Province

Natural Science Foundation of Anhui Province

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s10825-022-01934-5.pdf

Reference42 articles.

1. Wong, H.S.P., Raoux, S., Kim, S., Liang, J.L., Reifenberg, J.P., et al.: Phase change memory. Proc. IEEE 98, 2201–2227 (2010). https://doi.org/10.1109/JPROC.2010.2070050

2. Pirovano, A., Pellizzer, F., Tortorelli, I., Rigano, A., Harrigan, R., et al.: Phase-change memory technology with self-aligned μTrench cell architecture for 90 nm node and beyond. Solid-State Electron. 52, 1467–1472 (2008). https://doi.org/10.1016/j.sse.2008.04.031

3. Raoux, S., Burr, G.W., Breitwisch, M.J., Rettner, C.T., Chen, Y.C., et al.: Phase-change random access memory: a scalable technology. IBM J. Res. Dev. 52, 465–479 (2008). https://doi.org/10.1147/rd.524.0465

4. Zhang, T., Song, Z.T., Liu, B., Liu, W.L., Feng, S.L., Chen, B.: Si1Sb2Te3 phase change material for chalcogenide random access memory. Chin. Phys. 16, 2475–2478 (2007). https://doi.org/10.1088/1009-1963/16/8/053

5. Yang, F., Tao, Y., Zhang, L., Han, J.N., Cao, X.C., et al.: Ab initio study on the fast reversible phase transitions of Ge2Sb2Te5. J. Appl. Phys. 130, 025106 (2021). https://doi.org/10.1063/5.0050131

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