Metastablity of the undissociated state of dissociated dislocations
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference21 articles.
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2. F.A. Ponce, in: A.G., Cullis, D.B., Holt (Eds.), Microscopy of Semiconducting Materials (Inst. Phys. Conf. Ser. No. 76), Inst. Phys., Bristol, 1985, pp. 1–10.
3. High-resolution transmission electron microscopy of 60[ddot] dislocations in si-GaAs
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1. Possible origin of the discrepancy in Peierls stresses of fcc metals: First-principles simulations of dislocation mobility in aluminum;Physical Review B;2013-08-28
2. Chapter 93 Dislocations in Silicon at High Stress;Dislocations in Solids;2010
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4. The dissociated properties of dislocation in two-dimensional triangular lattice;Open Physics;2008-01-01
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