On the dissociation of dislocations in InP
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference37 articles.
1. Stacking fault energy and ionicity of cubic III–V compounds
2. Stacking-Fault Energies of GaAs
3. Effects of Dopants and Deformation Temperature on Stacking Fault Energy in GaAs
4. The Dissociation of Dislocations in Pure and Doped GaAs Crystals
5. Investigations of dislocation strain fields using weak beams
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1. Stacking fault energies in austenitic stainless steels;Acta Materialia;2016-06
2. Metastablity of the undissociated state of dissociated dislocations;Materials Science and Engineering: A;2005-07
3. Microscopic deformation mechanisms in InP single crystals;Philosophical Magazine A;1997-07
4. Calculation of displacement fields and simulation of HRTEM images of dislocations in sphalerite type A(III)B(V) compound semiconductors;Crystal Research and Technology;1997
5. Plastic deformation, extended stacking faults and deformation twinning in single crystalline indium phosphide 2. S doped InP;Philosophical Magazine A;1996-03
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