Electron microscopy of dislocations introduced into GaN by plastic deformation
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/095008399177048
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation;Journal of Applied Physics;2022-08-14
2. Exceptional Friction Mitigation via Subsurface Plastic Shear in Defective Nanocrystalline Ceramics;Materials Research Letters;2014-07-10
3. Structural Defects in GaN-Based Materials and Their Relation to GaN-Based Laser Diodes;Materials and Reliability Handbook for Semiconductor Optical and Electron Devices;2012-08-23
4. TEM study of defects generated in 4H-SiC by microindentations on the prismatic plane;Philosophical Magazine Letters;2006-09
5. The surface topography of GaN grown on Si (111) substrate before and after wet chemical etching;Materials Science in Semiconductor Processing;2006-02
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