High-resolution transmission electron microscopy of 60[ddot] dislocations in si-GaAs-Reference-Cited by-同舟云学术

High-resolution transmission electron microscopy of 60[ddot] dislocations in si-GaAs

Published:1989-05 Issue:5 Volume:59 Page:1045-1058
ISSN:0141-8610
Container-title:Philosophical Magazine A
language:en
Short-container-title:Philosophical Magazine A

Author:

Gerthsen D.,Ponce F. A.,Anderson G. B.

Publisher

Informa UK Limited

Subject

Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials

Link

http://www.tandfonline.com/doi/pdf/10.1080/01418618908209836

Reference13 articles.

1. Anstis, G. R., Hirsch, P. B., Humphreys, C. J., Hutchison, J. L. and Ourmazd, A. 1981. Microscopy of Semiconductor Materials Conference. Institute of Physics Conference Series No. 60. April6–101981, Oxford. pp.15Bristol: Institute of Physics.

2. Bourret, A., Desseaux, J. and D'Anterroches, A. 1981. Microscopy of Semiconductor Materials Conference. Institute of Physics Conference Series No. 60. April6–101981, Oxford. pp.9Bristol: Institute of Physics.

3. The Core Structure of Dislocations in GaAs

4. Hall effect of plastically deformed GaAs

5. The dissociation of dislocations in GaAs

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Materials science of defects in GaAs-based semiconductor lasers;Reliability of Semiconductor Lasers and Optoelectronic Devices;2021

2. Identification of point defects using high-resolution electron energy loss spectroscopy;Physical Review B;2019-03-18

3. Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates;Applied Surface Science;2014-07

4. Introduction to Space Charge Effects in Semiconductors;Springer Series in Solid-State Sciences;2010

5. Dislocation Dynamics During Plastic Deformation;Springer Series in Materials Science;2010