Target chambers for ion implantation using mechanical scanning-Reference-Cited by-同舟云学术

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Target chambers for ion implantation using mechanical scanning

Published:1981-10 Issue:1 Volume:189 Page:239-251
ISSN:0167-5087
Container-title:Nuclear Instruments and Methods in Physics Research
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research

Author:

Ryding G.

Publisher

Elsevier BV

Subject

General Engineering

Reference30 articles.

1. High current electrostatic deflector and scanner

2. Proc. Electrochemical Society Meeting;Kirkpatrick,1978

3. Varian/Extrion Division, Model 80-10.

4. P.R. Hanley, these Proceedings, p. 227.

5. A.B. Jones and W.R. Fewer, U.S. Patent 4139051 (1979).

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2. Concepts and designs of ion implantation equipment for semiconductor processing;Review of Scientific Instruments;2006-11

3. Ion implantation in CMOS Technology: Machine Challenges;Ion Implantation and Synthesis of Materials;2006

4. Improved dose uniformity by utilizing the beam profile in the ion implantation process;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-06

5. Target heating in ion implantation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1990-03

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