Study on particle removal during the Co post-CMP cleaning process
Author:
Publisher
Elsevier BV
Subject
Colloid and Surface Chemistry
Reference38 articles.
1. Citric acid as a complexing agent in chemical mechanical polishing slurries for cobalt films for interconnect applications;Popuri;ECS J. Solid State Sci. Technol.,2017
2. Formation of Cobalt-BTA complexes and their removal from various surfaces relevant to cobalt interconnect applications;Seo;ECS J. Solid State Sci. Technol.,2019
3. Characterization of different cobalt surfaces and interactions with benzotriazole for CMP application;Ryu;ECS J. Solid State Sci. Technol.,2020
4. Study on effect of complexing agents on Co oxidation/dissolution for chemical-mechanical polishing and cleaning process;Kwon;Microelectron. Eng.,2020
5. Effect of potassium tartrate on removal rate selectivity of Co/TiN/TEOS for Cobalt “Buff Step” chemical mechanical planarization;Cheng;ECS J. Solid State Sci. Technol.,2020
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1. Cleaning mechanisms during post chemical mechanical polishing (CMP) using particle removal of surfactants via a citric acid-based solution;Colloids and Surfaces A: Physicochemical and Engineering Aspects;2024-09
2. The effect of non-ionic surfactants on the removal of cerium oxide particles in STI CMP post cleaning;Materials Science in Semiconductor Processing;2024-06
3. Exploration of Post-Cmp Cleaning - New Insights into the Synergistic Effect of Particle Removal of Surfactants in Citric Acid Based Systems: Experimental and Mechanistic Analysis;2024
4. Developing an Efficient Forward Design Method for Co Post-CMP Cleaning Formulations Based on Nanoparticle Removal Mechanisms;ACS Applied Electronic Materials;2023-11-29
5. Review—Post-Chemical Mechanical Planarization Cleaning Technology;ECS Journal of Solid State Science and Technology;2023-11-01
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