The role of atomic hydrogen for formation of quantum dots by self-organizing process in MBE-Reference-Cited by-同舟云学术

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The role of atomic hydrogen for formation of quantum dots by self-organizing process in MBE

Published:1996-09 Issue:1-4 Volume:227 Page:299-302
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Chun Yong Jin,Nakajima Shigeru,Okada Yoshitaka,Kawabe Mitsuo

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

2. Self-organized growth of strained InGaAs quantum disks

3. Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs

4. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs

5. Time‐resolved optical characterization of InGaAs/GaAs quantum dots

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extremely long carrier lifetime over 200 ns in GaAs wall-inserted type II InAs quantum dots;Applied Physics Letters;2012-03-12

2. Optical property improvement of InAs/GaAs quantum dots grown by hydrogen-plasma-assisted molecular beam epitaxy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-05

3. CORRUGATED SURFACES FORMED ON GaAs (331)A SUBSTRATES: THE TEMPLATE FOR LATERALLY ORDERED InGaAs NANOWIRES;International Journal of Nanoscience;2006-12

4. Effect of hydrogen in AlGaAs grown by atomic hydrogen-assisted molecular beam epitaxy;Journal of Crystal Growth;1999-02

5. Highly packed InGaAs quantum dots on GaAs(311)B;Applied Physics Letters;1998-12-07

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