Extremely long carrier lifetime over 200 ns in GaAs wall-inserted type II InAs quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3694284
Reference23 articles.
1. Photosensitization of ZnO Nanowires with CdSe Quantum Dots for Photovoltaic Devices
2. Quantum Dot Solar Cells. Harvesting Light Energy with CdSe Nanocrystals Molecularly Linked to Mesoscopic TiO2 Films
3. Quantum Dot Solar Cells. Tuning Photoresponse through Size and Shape Control of CdSe−TiO2 Architecture
4. Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell
5. Carrier dynamics of type-II InAs∕GaAs quantum dots covered by a thin GaAs1−xSbx layer
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