Carrier dynamics of type-II InAs∕GaAs quantum dots covered by a thin GaAs1−xSbx layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2964191
Reference19 articles.
1. 1.3 μm room-temperature GaAs-based quantum-dot laser
2. Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates
3. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
4. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
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