Effects of low temperature annealing on the ultrathin La2O3 gate dielectric; comparison of post deposition annealing and post metallization annealing-Reference-Cited by-同舟云学术

Effects of low temperature annealing on the ultrathin La2O3 gate dielectric; comparison of post deposition annealing and post metallization annealing

Published:2005-06 Issue: Volume:80 Page:206-209
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Ng J.A.,Kuroki Y.,Sugii N.,Kakushima K.,Ohmi S.-I.,Tsutsui K.,Hattori T.,Iwai H.,Wong H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. G. Wilk, R. Wallace, J. Anthony, High-k gate dielectrics: current status and materials properties considerations, J. Appl. Phys. 89 (2001) 52435275.A.

2. Chin, Y. Wu, S. Chen, C. Liao, W. Chen, High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10 A, Symp. VLSI Technol. Tech. Dig. (2000) 1617.

3. T. Yoshida, T. Shiraishi, H. Nohira, S.-I. Ohmi, Y. Kobayashi, J.A. Ng, H. Iwai, W. Sakai, K. Nakajima, M. Suzuki, K. Kimura, T. Hattori, Effect of post-deposition annealing of composition and chemical structures of La2O3 film/Si(100) interfacial transition layers, Int’l Workshop on Dielectric Thin Films for Future ULSI Devices, 2004.

4. Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics;Guha;Appl. Phys. Lett.,2000

5. Effects of post-metallization annealing of high-k dielectric thin films grown by MOMBE;Yun;Microelectron. Eng.,2005

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