Nanostructural and Electrical Properties of Al/Sn/La2O3 Nanocomposite as a Gate Dielectric of MOSFETs-Reference-Cited by-同舟云学术

Nanostructural and Electrical Properties of Al/Sn/La2O3 Nanocomposite as a Gate Dielectric of MOSFETs

Published:2019-07-27 Issue:4 Volume:90 Page:637-646
ISSN:0369-8203
Container-title:Proceedings of the National Academy of Sciences, India Section A: Physical Sciences
language:en
Short-container-title:Proc. Natl. Acad. Sci., India, Sect. A Phys. Sci.

Author:

Ebrahimzadeh Masoud,Nakhaei Mehrnoush,Padam Mansoure,Bahari Ali

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/s40010-019-00637-0.pdf

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5. Bahari A, Ramzannejad A (2012) Nanostructural properties of La2O3/HfO2 gate dielectrics. Int J Mod Phys B 26:1250080–1250089

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