Phosphorous doped SOG as a pre-metal-dielectric for sub-50nm technology nodes-Reference-Cited by-同舟云学术

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Phosphorous doped SOG as a pre-metal-dielectric for sub-50nm technology nodes

Published:2008-10 Issue:10 Volume:85 Page:2085-2088
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Das Arabinda,Stavrev Momtchil,Prenz Heike,Schardin Markus,Uhlig Ines,Graf Werner,Sperlich Hans-Peter

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. High Aspect Ratio Trench Filling Using Two‐Step Subatmospheric Chemical Vapor Deposited Borophosphosilicate Glass for <0.18 μm Device Application

2. Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM

3. Investigating the Role of Stress in SOG-filled Shallow-Trench-Isolation Structures of sub-70 nm Device

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-quality spin-on glass-based oxide as a matrix for embedding HfO2 nanoparticles for metal-oxide-semiconductor capacitors;Journal of Materials Science;2011-10-18

2. Enhancement of the electrical characteristics of MOS capacitors by reducing the organic content of H2O-diluted Spin-On-Glass based oxides;Materials Science and Engineering: B;2011-10

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