Investigating the Role of Stress in SOG-filled Shallow-Trench-Isolation Structures of sub-70 nm Device

Abstract

In this work, the role of stress and shrinkage during the processing of the sub-70nm shallow-trench isolation (STI) structures filled with a spin-on glass (SOG) material containing perhydro-polysilazane is discussed. The stress behavior of this material on blanket and patterned structures are compared. The different parameters for adjusting the stress and their influences on wet-etching properties and uniformity over the wafer are discussed. Finally, the effect of stress on electrical parameters is presented.