Investigation of the barrier slurry with better defect performance and facilitating post-CMP cleaning-Reference-Cited by-同舟云学术

Investigation of the barrier slurry with better defect performance and facilitating post-CMP cleaning

Published:2017-02 Issue: Volume:170 Page:21-28
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Luan Xiaodong,Liu Yuling,Zhang Baoguo,Wang Shengli,Niu Xinhuan,Wang Chenwei,Wang Juan

Funder

major national science and technology special projects

Department of Education- Funded Research Projects of Hebei Province, China

Natural Science Foundation of Hebei Province, China

Natural Science Young Foundation of Hebei Province, China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference50 articles.

1. Simplification of replacement metal gate CMP metrology for FinFET;Wedlake,2015

2. Moore's law: a path going forward;Holt,2016

3. A study on exploring the alkaline copper CMP slurry without inhibitors to achieve high planarization efficiency;Luan;Microelectron. Eng.,2016

4. Achievement of high planarization efficiency in CMP of copper at a reduced down pressure;Pandija;Microelectron. Eng.,2009

5. An analytical dishing and step height reduction model for chemical mechanical planarization (CMP);Fu;Transac. Semicond. Manuf.,2003

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