An analytical dishing and step height reduction model for chemical mechanical planarization (CMP)

Author:

Guanghui Fu ,Chandra A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 33 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Surface roughness evolution law in full-aperture chemical mechanical polishing;International Journal of Mechanical Sciences;2024-09

2. A mixed fluid film lubrication model to predict the tool-life of IBAP tool considering abrasive and molten water interaction with workpiece;Journal of Manufacturing Processes;2024-08

3. Dishing Study on Chemical Mechanical Planarization (CMP);2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17

4. Chemical mechanical polishing for indium bond pad damascene processing;Japanese Journal of Applied Physics;2024-02-19

5. Electroplating Process Improvement on Post-CMP Dishing Profile;2023 China Semiconductor Technology International Conference (CSTIC);2023-06-26

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