Impact of plasma post-nitridation on HfO2/Al2O3/SiGe gate stacks toward EOT scaling-Reference-Cited by-同舟云学术

Impact of plasma post-nitridation on HfO2/Al2O3/SiGe gate stacks toward EOT scaling

Published:2013-09 Issue: Volume:109 Page:266-269
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Han J.-H.,Zhang R.,Osada T.,Hata M.,Takenaka M.,Takagi S.

Funder

Strategic Information and Communications R&D Promotion Programme of the Ministry of Internal Affairs and Communications (SCOPE)

Semiconductor Technology Academic Research Center (STARC)

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. High-mobility Si and Ge structures

2. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

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