Metal–oxide–semiconductor interface properties of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature post-metallization annealing
Author:
Affiliation:
1. Department of Electrical Engineering and Information Systems, The University of Tokyo, 2-11-16 Yayoi, Bunkyo, Tokyo 113-0032, Japan
Funder
Japan Society for the Promotion of Science
Core Research for Evolutional Science and Technology
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5144198
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4. Abrupt SiGe and Si Profile Fabrication by Introducing Carbon Delta Layer
5. Ultralow Defect Density at Sub-0.5 nm HfO2/SiGe Interfaces via Selective Oxygen Scavenging
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