Improved GeOI substrates for pMOSFET off-state leakage control-Reference-Cited by-同舟云学术

Improved GeOI substrates for pMOSFET off-state leakage control

Published:2009-07 Issue:7-9 Volume:86 Page:1585-1588
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Romanjek K.,Augendre E.,Van Den Daele W.,Grandchamp B.,Sanchez L.,Le Royer C.,Hartmann J.-M.,Ghyselen B.,Guiot E.,Bourdelle K.,Cristoloveanu S.,Boulanger F.,Clavelier L.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

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2. K. Romanjek, L. Hutin, C. Le Royer, A. Pouydebasque, M.-A. Jaud, C. Tabone, E. Augendre, L. Sanchez, J.-M. Hartmann, H. Grampeix, V. Mazzocchi, S. Soliveres, R. Truche, L. Clavelier, P. Scheiblin, X. Garros, G. Reimbold, M. Vinet, F. Boulanger, S. Deleonibus, in: Proceedings of European Solid-State Device Research Conference, 2008, pp. 75–78.

3. J. Mitard, B. De Jaeger, F.E. Leys, G. Hellings, K. Martens, G. Eneman, D.P. Brunco, R. Loo, J.C. Lin, D. Shamiryan, T. Vandeweyer, G. Winderickx, E. Vrancken, C.H. Yu, K. De Meyer, M. Caymax, L. Pantisano, M. Meuris, M.M. Heyns, in: IEEE International Electron Devices Meeting Technical Digest, 2008, pp. 873–876.

4. Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(001) for microelectronics and optoelectronics purposes

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