Capacitive effective thickness of a few nanometers by atomic layer deposition and device performance in Ge gate-all-around fin field effect transistors
Author:
Affiliation:
1. National Nano Device Lab, Hsinchu Science Park, No. 26, Prosperity Road I, Hsinchu 30087, Taiwan
2. National Central University, 300 Jhongdai Road, Jhongli, Taoyuang, Taiwan
Publisher
SPIE-Intl Soc Optical Eng
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference31 articles.
1. Improved GeOI substrates for pMOSFET off-state leakage control
2. Modeling of negatively charged states at the Ge surface and interfaces
3. Parallel Core−Shell Metal-Dielectric-Semiconductor Germanium Nanowires for High-Current Surround-Gate Field-Effect Transistors
4. GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current
5. Achieving 1nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As
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