Impact of surface preparation for n-type Si:P and p-type SiGe:B semiconductors on low resistance silicide contacts-Reference-Cited by-同舟云学术

Impact of surface preparation for n-type Si:P and p-type SiGe:B semiconductors on low resistance silicide contacts

Published:2017-04 Issue: Volume:173 Page:22-26
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Carr A.,Peethala B.,Raymond M.,Adusumilli P.,Kamineni V.,Niu C.,Arceo De La Pena A.,Canaperi D.F.,Siddiqui S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference28 articles.

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5. Effective Schottky barrier height modulation using dielectric dipoles for source/drain specific contact resistivity improvement DEVICE FABRICATION AND SIMULATION;Ang;IEDM Proceed.,2012

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