Impact of Sn on the Ti/Ge solid-state reaction: Phase formation sequence, morphological and electrical properties

Author:

Quintero Andrea,Gergaud Patrice,Hartmann Jean-Michel,Reboud Vincent,Cassan Eric,Rodriguez Philippe

Funder

Agence Nationale de la Recherche

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. GeSn technology: Extending the Ge electronics roadmap;Gupta,2011

2. Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by germanium-tin (GeSn);Yang,2012

3. Ternary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETs;Wirths;Semicond. Sci. Technol.,2015

4. GeSn-based p-i-n photodiodes with strained active layer on a Si wafer;Tseng;Appl. Phys. Lett.,2013

5. GeSn heterojunction LEDs on Si substrates;Oehme;IEEE Photon. Technol. Lett.,2014

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