Author:
Quintero Andrea,Gergaud Patrice,Hartmann Jean-Michel,Reboud Vincent,Cassan Eric,Rodriguez Philippe
Funder
Agence Nationale de la Recherche
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference29 articles.
1. GeSn technology: Extending the Ge electronics roadmap;Gupta,2011
2. Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by germanium-tin (GeSn);Yang,2012
3. Ternary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETs;Wirths;Semicond. Sci. Technol.,2015
4. GeSn-based p-i-n photodiodes with strained active layer on a Si wafer;Tseng;Appl. Phys. Lett.,2013
5. GeSn heterojunction LEDs on Si substrates;Oehme;IEEE Photon. Technol. Lett.,2014
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