Author:
Raynal P.E.,Quintero A.,Loup V.,Rodriguez Ph.,Vallier L.,Aubin J.,Hartmann J.M.,Chevalier N.,Besson P.
Funder
LabEx Minos
French National Research Agency
Nano2017
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. B. Vincent et al., Biaxial and uniaxial compressive stress implemented in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments », ECS Trans., vol. 41, no 7, p. 239–248, 2011.
2. Lasing in direct-bandgap GeSn alloy grown on Si;Wirths;Nat. Photonics,2015
3. GeSn technology: extending the Ge electronics roadmap;Gupta,2011
4. Atomic layer deposition of Al2O3 on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment;Gupta;Appl. Phys. Lett.,2013
5. Impact of thickness on the structural properties of high tin content GeSn layers;Aubin;J. Cryst. Growth,2017
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