Funder
National S&T Major Project 02
Microelectronics Devices & Bulk Si FinFET Integrated Technology
Institute of Microelectronics
Chinese Academy of Sciences
Youth Innovation Promotion Association of CAS
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
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3. A 14nm logic technology featuring 2nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588μm2 SRAM cell size;Natarajan,2014
4. Optimization of SiGe selective epitaxy for source/drain engineering in 22nm node complementary metal-oxide semiconductor (CMOS);Wang;J. Appl. Phys.,2013
5. Integration of highly-strained SiGe materials in 14nm and beyond nodes FinFET technology;Wang;Solid State Electron.,2015
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