A DRAM compatible Cu contact using self-aligned Ta-silicide and Ta-barrier-Reference-Cited by-同舟云学术

A DRAM compatible Cu contact using self-aligned Ta-silicide and Ta-barrier

Published:2008-10 Issue:10 Volume:85 Page:2009-2012
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Zhao C.,Ahn J.Y.,Horiguchi N.,Demuynck S.,Tőkei Zs.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

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4. S. Mertens, T.Y. Hoffmann, C. Vrancken, S. Jakschik, O. Richard, H. Bender, C. Zhao, W. Vandervorst, P. Absil, A. Lauwers, in: ECS Spring Conference, May 18–23, Phoenix, 2008.

5. S. Demuynck, A. Nackaerts, G. Van den Bosch, T. Chiarella, J. Ramos, Zs. Tőkei, J. Vaes, N. Heylen, G. Beyer, M. Van Hove, T. Mandrekar, R. Schreutelkamp, in: Proc. IITC, 2006, p. 178.

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3. Simultaneous Formation of NiSi Contact and Cu Plug/Ti Barrier;Korean Journal of Materials Research;2010-06-27