Ni based silicides for 45nm CMOS and beyond-Reference-Cited by-同舟云学术

Ni based silicides for 45nm CMOS and beyond

Published:2004-12 Issue: Volume:114-115 Page:29-41
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Lauwers Anne,Kittl Jorge A.,Van Dal Mark J.H.,Chamirian Oxana,Pawlak Malgorzata A.,de Potter Muriel,Lindsay Richard,Raymakers Toon,Pages Xavier,Mebarki Bencherki,Mandrekar Tushar,Maex Karen

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Nickel-based contact metallization for SiGe MOSFETs: progress and challenges

2. Ni- and Co-based silicides for advanced CMOS applications

3. Silicides and ohmic contacts

4. M.A. Nicolet, S.S. Lau, in: N.G. Einspruch, G.B. Larrabee (Eds.), VLSI Electronics: Microstructure Science, vol. 6, Academic Press, New York, 1983, p. 344 (Chapter 6).

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