High manufacturability Cu multilevel interconnects featuring hybrid-NCS structure-Reference-Cited by-同舟云学术

High manufacturability Cu multilevel interconnects featuring hybrid-NCS structure

Published:2005-12 Issue:3-4 Volume:82 Page:380-386
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Sugiura I.,Misawa N.,Otsuka S.,Nishikawa N.,Iba Y.,Sugimoto F.,Setta Y.,Sakai H.,Koura Y.,Nakano K.,Karasawa T.,Ohkura Y.,Kouno T.,Watatani H.,Nakata Y.,Mizushima Y.,Suzuki T.,Kitada H.,Shimizu N.,Nakai S.,Nakaishi M.,Fukuyama S.,Nakamura T.,Yano E.,Miyajima M.,Watanabe K.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Proceedings of the IEEE 2004 International Interconnect Technology Conference;Nakamura,2004

2. Proceedings of the IEEE 2003 International Interconnect Technology Conference;Ikeda,2003

3. Proceedings of the IEEE 2003 International Electron Devices Meeting;Nakai,2003

4. Y. Iba, N. Misawa, I. Sugiura, N. Nishikawa, F. Sugimoto, Y. Setta, H. Kitada, Y. Koura, Y. Nakata, J. Nakahira, K. Nakano, A. Hasegawa, M. Nakaishi, N. Shimizu, S. Fukuyama, E. Yano, M. Miyajima, in: Proceedings of the Advanced Metallization Conference 2004, MRS, 2005, p. 97.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of methods for the mitigation of plasma‐induced damage to low‐dielectric‐constant interlayer dielectrics used for semiconductor logic device interconnects;Plasma Processes and Polymers;2019-06-27

2. Effect of fluorine contamination on barrier metal oxidation;Microelectronic Engineering;2010-03

3. Novel low-k SiOC (k=2.4) with superior tolerance to direct polish and ashing for advanced BEOL integration;2009 IEEE International Interconnect Technology Conference;2009-06

4. A model for Si, SiCH, SiO2, SiOCH, and porous SiOCH etch rate calculation in inductively coupled fluorocarbon plasma with a pulsed bias: Importance of the fluorocarbon layer;Journal of Applied Physics;2007-09-15